Importance

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Abstract

An embodiment includes a transistor section, a gate electrode pad, a gate connection member, a gate circuit section, and a casing. The transistor section includes a drain electrode, a source electrode and a gate electrode. The transistor section and the gate electrode pad are provided on a semiconductor substrate. The gate connection member connects a gate terminal and the gate electrode pad. The gate circuit section connects the gate electrode pad and the gate electrode, and includes a parallel circuit with a capacitor and a resistive element, a first connection member electrically connecting the capacitor to the gate electrode pad and a second connection member electrically connecting the capacitor to the gate electrode. The casing accommodates the transistor section, the gate electrode pad and the gate circuit section.

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First Claim