SEMICONDUCTOR DEVICE AND METHOD FOR FABRICATING THE SAME
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United States of America
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Issued Date -
Mar 20, 2025
app pub date -
Dec 4, 2024
filing date -
Dec 4, 2024
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Abstract
A method for fabricating a semiconductor device includes the steps of forming a gate structure on a substrate, forming an interlayer dielectric (ILD) layer on the gate structure, forming a contact hole in the ILD layer adjacent to the gate structure, performing a plasma doping process to form a doped layer in the ILD layer and a source/drain region adjacent to the gate structure, forming a conductive layer in the contact hole, planarizing the conductive layer to form a contact plug, removing the doped layer to form an air gap adjacent to the contact plug, and then forming a stop layer on the ILD layer and the contact plug.
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