SEMICONDUCTOR STRUCTURE AND MANUFACTURING METHOD THEREOF
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United States of America
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Issued Date -
Mar 20, 2025
app pub date -
Jul 23, 2024
filing date -
Jul 23, 2024
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Abstract
A semiconductor structure including a substrate, a first electrode, a first dielectric layer, and a second electrode is provided. The first electrode is located on the substrate. The first electrode is pillar-shaped. The first dielectric layer is located on the first electrode. The second electrode is located on the first dielectric layer. The second electrode includes a first silicon germanium (SiGe) layer and a second SiGe layer. The first SiGe layer is located on the first dielectric layer. The second SiGe layer is located on the first SiGe layer. A content of germanium in the second SiGe layer is greater than a content of germanium in the first SiGe layer.
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