A POWER SEMICONDUCTOR DEVICE, A POWER CONVERTER INCLUDING THE SAME AND A MANUFACTURING METHOD OF POWER SEMICONDUCTOR DEVICE
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United States of America
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Issued Date -
Mar 20, 2025
app pub date -
Sep 18, 2024
filing date -
Sep 18, 2024
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Abstract
A power semiconductor device includes a substrate, a first epi layer of a first conductivity type disposed on the substrate, a second epi layer of a first conductivity type disposed on the first epi layer, a first well of a second conductivity type partially disposed in the first epi layer, a second well of a second conductivity type disposed on the second epi layer, an ion implantation region and a source region of the second conductivity type disposed in the second well, a source electrode in the source region, a gate insulating layer in a trench region where a portion of the ion implantation region and the second epi layer is removed, a trench gate disposed on the gate insulating layer, an interlayer insulating layer disposed on the trench gate and a gate electrode electrically connected to the trench gate.
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