SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING SAME
Number of patents in Portfolio can not be more than 2000
United States of America
Stats
-
N/A
Issued Date -
Mar 20, 2025
app pub date -
Sep 6, 2024
filing date -
Sep 6, 2024
priority date (Note) -
Published
status (Latency Note)
Importance
Abstract
A method of manufacturing a lateral diffusion metal oxide semiconductor device. The method may include forming a high voltage deep N-well within a substrate, forming a high voltage N-well within the substrate, wherein the high voltage N-well is electrically coupled to the high voltage deep N-well, forming a drain terminal electrically coupled to the high voltage N-well, forming a source terminal, and forming a gate terminal disposed between the source terminal and the drain terminal. At least one of the high voltage N-well and the high voltage deep N-well may extend less than 2.0 microns beyond the drain terminal in a direction opposite from the source terminal.
First Claim
Family
International Classification(s)
Cited Art Landscape
Patent Citation Ranking
Recipient Email Address
Recipient Email Address
Comment
Recipient Email Address
Add to Portfolio(s)
To add this patent to one, or more, of your portfolios, simply click the add button.
This Patent is in these Portfolios:
Add to additional portfolios:
Last Refreshed On:
Changes done successfully