MEMORY DEVICE AND ELECTRONIC APPARATUS INCLUDING THE SAME
Number of patents in Portfolio can not be more than 2000
United States of America
Stats
-
N/A
Issued Date -
Mar 20, 2025
app pub date -
Sep 13, 2024
filing date -
Sep 13, 2024
priority date (Note) -
Published
status (Latency Note)
Importance
Abstract
A memory device includes: a channel layer; a gate electrode spaced apart from the channel layer; and a multilayer charge trap layer disposed between the channel layer and the gate electrode, wherein the multilayer charge trap layer includes silicon oxynitride, the silicon oxynitride including gallium or silicon nitride including gallium.
First Claim
Family
International Classification(s)
- No Non-US Classification to display
Cited Art Landscape
Patent Citation Ranking
- Citation Ranking not provided
Recipient Email Address
Recipient Email Address
Comment
Recipient Email Address
Add to Portfolio(s)
To add this patent to one, or more, of your portfolios, simply click the add button.
This Patent is in these Portfolios:
Add to additional portfolios:
Last Refreshed On:
Changes done successfully