SEMICONDUCTOR DEVICES AND ELECTRONIC SYSTEMS INCLUDING THE SAME
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United States of America
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Issued Date -
Mar 20, 2025
app pub date -
Dec 4, 2024
filing date -
Dec 4, 2024
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Abstract
A method of fabricating a semiconductor device is provided. The method includes: forming a mold structure, in which sacrificial layers and insulating layers are alternately stacked, on a substrate; forming trenches to penetrate the mold structure; forming first sacrificial patterns in the trenches; forming a first supporting layer on the mold structure and the first sacrificial patterns; forming vertical structures to penetrate the first supporting layer and the mold structure; forming a second supporting layer on the first supporting layer and on the vertical structures; forming openings to penetrate the first and second supporting layers and to expose the first sacrificial patterns; removing the first sacrificial patterns through the openings; and replacing the sacrificial layers with electrodes.
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