INDUCTIVE DRAIN AND/OR BODY LADDERS IN RF SWITCH STACKS
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United States of America
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Mar 20, 2025
app pub date -
Nov 29, 2024
filing date -
Nov 29, 2024
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Abstract
Methods and devices to reduce the gate-induced drain/body leakage current (GIDL) generated in FET switch stacks when in OFF state are disclosed. Such devices include inductors as part of bias networks coupled with drain/source terminals and/or body terminals of the transistors within the switch stack. Hybrid approaches where resistors in combination with inductors are implemented as part the bias network are also described.
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