Advanced Phase-Leg Short-Circuit Protection for Third-Generation Semiconductors

Number of patents in Portfolio can not be more than 2000

United States of America

APP PUB NO 20250096788A1
SERIAL NO

18469502

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Abstract

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Shoot-through current flows when a pull-up transistor and a pull-down transistor in series both turn ON at the same time, such as due to noise. The transistor that should be OFF has an OFF drain-source voltage that is high when the other transistor is ON, but quickly falls when the OFF transistor erroneously turns on. A shoot-through protection circuit compares the OFF drain-source voltage of the OFF transistor to a reference voltage. When the OFF drain-source voltage falls below the reference voltage, a fault is signaled. The fault signal immediately disables the ON transistor by driving its gate inactive (low) to stop the shoot-through current. The reference voltage may be a fraction of the power voltage, such as 30% of a 400-volt input power bus, providing over 100 volts noise immunity, preventing false triggering yet immediately blocking current when the reference voltage is passed without waiting for a blanking period.

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Patent Owner(s)

Patent OwnerAddress
HONG KONG APPLIED SCIENCE AND TECHNOLOGY RESEARCH INSTITUTE COMPANY LIMITED5/F PHOTONICS CENTRE 2 SCIENCE PART EAST AVENUE HONG KONG SCIENCE PARK SHATIN N T HONG KONG

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
CHEUNG, Sui Pung Hong Kong, HK 8 10
LI, Tin Ho Hong Kong, HK 9 32
YEUNG, Kai Wing Andy Hong Kong, HK 2 12
YIN, Changqing Hong Kong, HK 1 0

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