POWER TRANSISTORS WITH RESONANT CLAMPING CIRCUITS
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United States of America
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Mar 20, 2025
app pub date -
Sep 15, 2023
filing date -
Sep 15, 2023
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Abstract
In a general aspect, a circuit includes a metal-oxide semiconductor field-effect transistor (MOSFET) having a gate, a source, and a drain. The MOSFET has a first breakdown voltage. The circuit also includes a clamping circuit coupled between the drain and the source. The clamping circuit including a diode having a second breakdown voltage that is less than the first breakdown voltage. A cathode of the diode is coupled with the drain of the MOSFET. The clamping circuit further includes an inductor having a first terminal coupled with an anode of the diode, and a second terminal coupled with the source of the MOSFET.
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