METHOD OF MANUFACTURING SEMICONDUCTOR COMPOSITE DEVICE
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United States of America
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Issued Date -
Mar 20, 2025
app pub date -
Dec 4, 2024
filing date -
Dec 4, 2024
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Abstract
A method of manufacturing a semiconductor composite device includes picking up a composite integrated film from a formation substrate having a formation surface, the composite integrated film being in advance formed on the formation substrate; and bonding in a first bonding process the composite integrated film to a substrate front surface of a circuit board. The composite integrated film includes a base member thin film having a base member first surface and a base member second surface facing each other, one or more penetration parts each penetrating the base member thin film, one or more electrodes each including an electrode surface in a planar shape formed on the base member second surface's side, and an element disposed on the base member first surface. In the first bonding process, the base member second surface of the composite integrated film is bonded to the substrate front surface.
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