SEMICONDUCTOR DEVICE WITH A SILICON CARBIDE PORTION AND A GLASS STRUCTURE AND METHOD OF MANUFACTURING
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United States of America
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Mar 20, 2025
app pub date -
Sep 16, 2024
filing date -
Sep 16, 2024
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Abstract
A semiconductor device includes a single-crystalline silicon carbide portion with a first surface, an opposite second surface, and a third surface extending from the first surface in a direction of the second surface. Along the third surface, hydrogen atoms and/or atoms of one or more nonmetal elements other than silicon and having an atomic number greater than six saturate dangling bonds of the silicon carbide portion and/or a passivating coating is in direct contact with the third surface. The semiconductor device further includes a glass structure and an interface layer structure between the third surface and the glass structure.
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