BACKSIDE FUSE STRUCTURE UTILIZING BACKSIDE CONTACT

Number of patents in Portfolio can not be more than 2000

United States of America

APP PUB NO 20250096127A1
SERIAL NO

18470664

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Abstract

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A semiconductor integrated circuit (IC) device includes a backside fuse structure and a backside contact. The backside fuse structure is located within the backside of the semiconductor IC device vertically between a transistor there above and a backside back end of the line (BEOL) network. The backside fuse structure includes a fuse wire and a deep via contact that is connected to both the fuse wire and to a frontside BEOL network. The backside contact is connected to the transistor, to the backside BEOL network, and to the fuse wire. The backside fuse structure may be in a non-programmed state or a programmed state. When in a non-programmed state, an open circuit exists that prevents current flow through the fuse wire or through the backside contact.

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Patent Owner(s)

Patent OwnerAddress
INTERNATIONAL BUSINESS MACHINES CORPORATIONNEW ORCHARD ROAD ARMONK NY 10504

International Classification(s)

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Clevenger, Lawrence A Saratoga Springs, US 787 5051
HAETTY, JENS Halfmoon, US 8 18
Huang, Huai Clifton Park, US 121 221
Jog, Atharv Albany, US 2 0
Lanzillo, Nicholas Anthony Wynantskill, US 194 42
Moy, Dan Bethel, US 35 785
Murphy, Christopher Red Hook, US 114 1267
Shobha, Hosadurga Niskayuna, US 109 510
Xie, Ruilong Niskayuna, US 1683 12538

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