SELECTIVE DEPOSITION OF GRAPHENE ON COBALT-CAPPED COPPER DUAL DAMASCENE INTERCONNECT

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United States of America

APP PUB NO 20250096036A1
SERIAL NO

18291532

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Abstract

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A method for selectively depositing graphene on cobalt caps on copper interconnects for dual damascene structures in a back-end-of-line substrate is provided. The method comprises providing a semiconductor substrate comprising a first dielectric layer, the copper interconnect in the first dielectric layer, and the cobalt cap on the copper interconnect, the cobalt cap having an exposed metal surface, wherein the exposed metal surface comprises cobalt, and selectively depositing carbon layer on the exposed metal surface.

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Patent Owner(s)

Patent OwnerAddress
INTERNATIONAL BUSINESS MACHINES CORPORATIONNEW ORCHARD ROAD ARMONK NY 10504

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Edelstein, Daniel C White Plains, US 303 6461
Huang, Huai Saratoga, US 121 221
Knarr, Randolph Voorheesville, US 5 10
Li, Juntao Cohoes, US 613 3837
Narkeviciute, Ieva Portland, US 9 20
Nguyen, Son Van Schenectady, US 95 2565
Nogami, Takeshi Schenectady, US 235 4443
Parbatani, Asish Albany, US 2 0
Peethela, Cornelius Brown Slingerlands, US 1 0
Ramanan, Vinayak Portland, US 2 0
Schmitz, Stefan Malta, US 82 540
Sharma, Kashish Tigard, US 11 11
Shobha, Hosadurga K Niskayuna, US 37 530
Srinivasan, Easwar Portland, US 42 3866
Van, Schravendijk Bart J Palo Alto, US 91 8614
Varadarajan, Bhadri N Beaverton, US 64 4672

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