Importance

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Abstract

To manufacture a MOSFET device, first, a patterned mask is utilized to implant first ions, to form a well region in which diffusion is not easy. Then, the patterned mask and spacers on its sidewalls are utilized to implant second ions in self-alignment with a source region. Further, the characteristic that the second ions are easier to diffuse than the first ions is utilized to form a semi-superjunction located at a bottom of the well region and connected to the bottom of the well region. The semi-superjunction effectively expands a junction depth of the well region, so that a withstand voltage of the device is increased to achieve high-conduction performance of the device, and also shifts a peak of electric field strength below a gate oxide layer to below the well region, so that the electric field strength below the gate oxide layer is effectively reduced and is more uniform.

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First Claim