ETCHING METHOD AND PLASMA PROCESSING APPARATUS
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United States of America
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Mar 20, 2025
app pub date -
Dec 3, 2024
filing date -
Dec 3, 2024
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Abstract
Provided is a technique for improving a mask selectivity in etching. An etching method according to the present disclosure includes step (a) preparing a substrate including a silicon-containing film and a mask on the silicon-containing film, the mask including an opening pattern, step (b) forming a metal-containing film on the mask, and step (c) etching the silicon-containing film by generating the plasma from a first processing gas containing a hydrogen fluoride gas.
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