IN-SITU SIDEWALL PASSIVATION TOWARD THE BOTTOM OF HIGH ASPECT RATIO FEATURES
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United States of America
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Issued Date -
Mar 20, 2025
app pub date -
Sep 20, 2023
filing date -
Sep 20, 2023
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Abstract
Methods of semiconductor processing may include providing a silicon-containing precursor and an oxygen-containing precursor to a processing region of a semiconductor processing chamber. A substrate may be housed within the processing region. A feature may extend through one or more layers of material disposed on the substrate. The methods may include forming plasma effluents of the silicon-containing precursor and the oxygen-containing precursor. The methods may include contacting the substrate with the plasma effluents of the silicon-containing precursor and the oxygen-containing precursor. The contacting may form a silicon-and-oxygen-containing material on at least a bottom portion of the feature. A temperature in the processing region may be maintained at less than or about 0° C.
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