PLASMA PROCESSING APPARATUS AND METHOD FOR FABRICATING SEMICONDUCTOR DEVICE USING THE SAME
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United States of America
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Issued Date -
Mar 20, 2025
app pub date -
Apr 19, 2024
filing date -
Apr 19, 2024
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Abstract
A plasma processing apparatus includes: a plasma chamber; a radio frequency (RF) power supply configured to generate plasma in the plasma chamber; an electromagnet configure to apply a magnetic field to the plasma; and a pulse current generator configured to provide a pulse current to the electromagnet, wherein each period of the pulse current includes a first section and a second section subsequent to the first section, and the pulse current generator is further configured to: provide, at the first section, the pulse current to the electromagnet in a first direction to generate the magnetic field, and provide, at the second section, the pulse current to the electromagnet in a second direction opposite to the first direction to reduce intensity of the magnetic field generated at the first section.
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