SEMICONDUCTOR MEMORY DEVICE

Number of patents in Portfolio can not be more than 2000

United States of America

APP PUB NO 20250095743A1
SERIAL NO

18829434

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Abstract

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A semiconductor memory device includes: a first conductive layer; and a second conductive layer adjacent to the first conductive layer. Write loops each include: a first program operation that applies the first conductive layer with a program voltage and applies a bit line with a first bit line voltage; and a second program operation that applies the first conductive layer with the program voltage and applies the bit line with a second bit line voltage larger than the first bit line voltage. The write operation includes a state judging operation that judges whether a memory cell corresponding to the semiconductor layer and the second conductive layer has been controlled to a Low-state, or not. When the memory cell has been controlled to the Low-state, the first program operation is executed, and when the memory cell has not been controlled to the Low-state, the second program operation is executed.

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Patent Owner(s)

Patent OwnerAddress
KIOXIA CORPORATIONTOKYO 108-0023

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
KONDO, Masaki Yokkaichi Mie, JP 246 2387
MAEDA, Takashi Kamakura Kanagawa, JP 292 2848
OGURA, Tatsuo Yokkaichi Mie, JP 3 1

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