MEMORY DEVICE HAVING TRACKING WORD LINE WITH ADJUST CIRCUIT, METHOD OF OPERATING SAME AND METHOD OF MANUFACTURING SAME
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United States of America
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Issued Date -
Mar 20, 2025
app pub date -
Sep 21, 2023
filing date -
Sep 21, 2023
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Abstract
A memory device includes: a first array of memory cells; a second array of tracking cells, the second array being configured to emulate the first array; a first word line coupled to corresponding ones of the memory cells in a corresponding one of rows of the first array and to the tracking cells; a second word line configured to emulate the first word line; a first adjust circuit coupled to the first word line; a second adjust circuit coupled to the second word line; and an adjust-timing circuit coupled to the second adjust circuit.
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