Computing-In-Memory Architecture

Number of patents in Portfolio can not be more than 2000

United States of America

APP PUB NO 20250095702A1
SERIAL NO

18967733

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Abstract

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Systems and methods are provided for a computing-in memory circuit that includes a bit line and a plurality of computing cells connected to the bit line. Each of the plurality of computing cells includes a memory element, having a data output terminal; a logic element, having a first input terminal, a second input terminal and an output terminal, wherein the first input terminal is coupled to the data output terminal of the memory element, the second input terminal receives a select signal; and a capacitor, having a first terminal and a second terminal, where the first terminal is coupled to the output terminal of the logic element, the second terminal is coupled to the bit line. A voltage of the bit line is driven by the plurality of computing cells.

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Patent Owner(s)

Patent OwnerAddress
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTDNO 8 LI-HSIN ROAD 6 HSINCHU SCIENCE PARK HSINCHU 300

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Chang, Jonathan Tsung-Yung Hsinchu City, TW 131 785
Chih, Yu-Der Hsinchu City, TW 195 382
Lee, Chia-Fu Hsinchu City, TW 103 270
Shih, Yi-Chun Taipei, TW 173 404

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