MEMORY DEVICE GENERATING VOLTAGE RESPONSIVE TO TEMPERATURE AND METHOD OF OPERATING THE SAME

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United States of America

APP PUB NO 20250095696A1
SERIAL NO

18615790

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Abstract

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A memory device includes a memory cell array including a plurality of memory cells, a temperature sensor configured to measure an internal temperature and generate a temperature compensation code corresponding to the internal temperature, a voltage control circuit configured to generate a conversion temperature code converted from the temperature compensation code, and a voltage generation circuit configured to output a compensation voltage obtained by compensating for a level of a voltage used in an operation on the memory cell array responsive to the conversion temperature code. The temperature sensor and the voltage control circuit are may be located at different positions responsive to the memory cell array.

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Patent Owner(s)

Patent OwnerAddress
SK HYNIX INCGYEONGGI DO SOUTH KOREA GYEONGGI-DO

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
KANG, Min Hye Icheon-si Gyeonggi-do, KR 1 0
YANG, Chang Won Icheon-si Gyeonggi-do, KR 26 224

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