PHOTOMASK AND METHOD OF MANUFACTURING INTEGRATED CIRCUIT DEVICE BY USING THE SAME
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United States of America
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Issued Date -
Mar 20, 2025
app pub date -
Aug 29, 2024
filing date -
Aug 29, 2024
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Abstract
A photomask for a photolithography process includes a mask substrate, a reflective multilayer on the mask substrate, and a light absorber pattern on the reflective multilayer and having hole patterns, wherein the hole patterns include a main hole pattern for pattern transfer onto a wafer, first sub-resolution assist feature (SRAF) hole patterns arranged at regular intervals to provide honeycomb lattices in a first region centered around the main hole pattern and having a first pitch less than or equal to a diffraction limit in the photolithography process, and second SRAF hole patterns arranged at regular intervals to surround the main hole pattern and the first SRAF patterns and providing honeycomb lattices in a second region centered around the main hole pattern and surrounding the first region, the second SRAF hole patterns being arranged with a second pitch less than or equal to the diffraction limit in the photolithography process.
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