EUV LITHOGRAPHY MASKS AND METHODS
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United States of America
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Issued Date -
Mar 20, 2025
app pub date -
Feb 6, 2024
filing date -
Feb 6, 2024
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Abstract
An EUV lithography mask including a substrate, a patterned absorber layer including a first material and a second material. In some embodiments, the first material is a second row transition metal and the second material is a first row transition metal or second row transition metal. The disclosed EUV lithography masks reduce undesirable mask 3D effects.
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