INDIUM OXIDE NANORODS, METHODS FOR PREPARING AND USING SAME

Number of patents in Portfolio can not be more than 2000

United States of America

APP PUB NO 20250091895A1
SERIAL NO

18487608

Stats

ATTORNEY / AGENT: (SPONSORED)

Importance

Loading Importance Indicators... loading....

Abstract

See full text

Provided herein is a method for preparing indium oxide nanorods, comprising the following steps: S1: placing indium oxide powder at a central temperature control area of a tube furnace, and then placing a cleaned silicon wafer downstream from the indium oxide powder; S2: evacuating inside the tube furnace, and then continuing to introduce argon gas; and S3: adjusting a program to heat up the central temperature control area of the tube furnace and maintaining it at a temperature, and then naturally cooling to obtain a indium oxide nanorods grown on the surface of the silicon wafer.

Loading the Abstract Image... loading....

First Claim

See full text

Family

Loading Family data... loading....

Patent Owner(s)

Patent OwnerAddress
YANGTZE DELTA REGION INSTITUTE (HUZHOU) UNIVERSITY OF ELECTRONIC SCIENCE AND TECHNOLOGY OF CHINA313000 8TH FLOOR BUILDING B2 SOUTH TAIHU SCIENCE AND TECHNOLOGY INNOVATION COMPLEX NO 819 XISAISHAN ROAD HUZHOU CITY ZHEJIANG PROVINCE HUZHOU CITY ZHEJIANG PROVINCE 313000

International Classification(s)

Inventor(s)

Inventor Name Address # of filed Patents Total Citations
CHEN, Weiwu Huzhou City, CN 13 7
QIN, Zhaojun Huzhou City, CN 4 0

Cited Art Landscape

Load Citation

Patent Citation Ranking

Forward Cite Landscape

Load Citation