METAL OXIDE SEMICONDUCTOR-BASED LIGHT EMITTING DEVICE
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United States of America
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Issued Date -
Mar 13, 2025
app pub date -
Nov 22, 2024
filing date -
Nov 22, 2024
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Abstract
A semiconductor structure includes a superlattice with two or more unit cells, wherein each of the unit cells includes: a first epitaxial layer including NiO; and a second epitaxial layer including a second epitaxial oxide material. In some cases, the semiconductor structure can include: a first region including p-type conductivity, wherein the first region includes the superlattice; a second region including an epitaxial oxide material; and a third region including an epitaxial oxide material, wherein the second region is located between the first region and the third region along a growth direction.
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