PHOTODETECTORS AND METHODS OF FORMATION

Number of patents in Portfolio can not be more than 2000

United States of America

APP PUB NO 20250089397A1
SERIAL NO

18463818

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Abstract

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A photodetector may include an absorption region that is formed to have an increasing depth (or thickness) in a direction that is approximately parallel to the direction of incident light that is to be projected onto the absorption region. The increasing depth of the absorption region in the direction that is approximately parallel with the direction of incident light enables the incident light to be more uniformly distributed along the length of the absorption region in the direction that is approximately parallel with the direction of incident light. This reduces the likelihood that a particular area of the absorption region reaches optical saturation, which may enable the photodetector to operate a sustained high photodetector sensitivity and/or a sustained high light detection performance, among other examples.

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Patent Owner(s)

Patent OwnerAddress
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTDHSINCHU

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
LU, Hau-Yan Hsinchu City, TW 65 246
PENG, Chun-Yen Chiayi City, TW 39 40
TSUI, YingKit Felix Cupertino, US 48 6

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