PHOTODETECTOR ELEMENT, IMAGE SENSOR, AND METHOD FOR MANUFACTURING PHOTODETECTOR ELEMENT
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United States of America
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Issued Date -
Mar 13, 2025
app pub date -
Nov 22, 2024
filing date -
Nov 22, 2024
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Abstract
Provided is a photodetector element having a photoelectric conversion element, an optical filter provided on a light incident side of the photoelectric conversion element, and an interlayer provided between the photoelectric conversion element and the optical filter, in which the photoelectric conversion element has a quantum dot layer, a first electrode, and a second electrode, the optical filter has predetermined spectral characteristics, and the interlayer includes at least one kind of atom selected from the group consisting of Si, Al, Zr, Sn, Zn, Ce, and Hf, or includes a paraxylene polymer, or has a water vapor permeability as determined by a method in accordance with JIS K 7129 of 1×10−4 g/m2/day or less. Provided also are an image sensor and a method for manufacturing a photodetector element.
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