SEMICONDUCTOR DEVICE WITH BOTTOM DIELECTRIC ISOLATOR AND MANUFACTURING METHOD THEREOF
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United States of America
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Issued Date -
Mar 13, 2025
app pub date -
Sep 12, 2023
filing date -
Sep 12, 2023
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Abstract
A method includes forming a fin structure over a bottom dielectric isolator and a substrate. The fin structure includes a bottom channel layer, a sacrificial layer over the bottom channel layer, and a top channel layer over the sacrificial layer. A dummy gate is formed across the fin structure. Portions of the fin structure not covered by the gate structure are removed to expose a top surface of the bottom dielectric isolator. First source/drain epitaxial structures are epitaxially grown over the bottom dielectric isolator and are connected to the bottom channel layer. Second source/drain epitaxial structures are epitaxially grown over the first source/drain epitaxial structures and are connected to the top channel layer. The dummy gate and the sacrificial layer are replaced with a gate structure.
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