STRUCTURE WITH CAPACITOR AND FIN TRANSISTOR AND FABRICATING METHOD OF THE SAME

Number of patents in Portfolio can not be more than 2000

United States of America

APP PUB NO 20250089349A1
SERIAL NO

18381639

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Abstract

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A structure with a capacitor and a fin transistor includes a substrate. The substrate includes a capacitor region and a fin transistor region. A mesa is disposed within the capacitor region of the substrate. The mesa protrudes from a surface of the substrate. The mesa includes a top surface and two sloping surfaces. Each of the sloping surfaces connects to the top surface of the mesa and the surface of the substrate. A doping region is disposed within the mesa. A capacitor electrode is only disposed on the top surface. A capacitor dielectric layer is disposed between the capacitor electrode and the doping region.

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Patent Owner(s)

Patent OwnerAddress
UNITED MICROELECTRONICS CORPNO 3 LI-HSIN ROAD 2 SCIENCE-BASED INDUSTRIAL PARK HSIN-CHU CITY

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Lin, Chun-Hao Kaohsiung City, TW 58 164

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