SEMICONDUCTOR DEVICES, SEMICONDUCTOR STRUCTURES AND METHODS FOR FABRICATING A SEMICONDUCTOR STRUCTURE
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United States of America
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Mar 13, 2025
app pub date -
Nov 21, 2024
filing date -
Nov 21, 2024
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Abstract
A semiconductor device includes a bipolar junction transistor (BJT) structure including emitters in a first well having a first conductive type, collectors in respective second wells, the second wells having a second conductive type different from the first conductive type and being spaced apart from each other with the first well therebetween, and bases in the first well and between the emitters and the collectors. The BJT structure includes active regions having different widths that form the emitters, the collectors, and the bases.
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