Importance

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Abstract

A semiconductor device is provided. The semiconductor device comprises: a substrate including an active region having an active cell region and a termination region surrounding the active region; a gate bus disposed in the active region to be non-overlapped with the active cell region; a gate electrode extending from the gate bus and disposed in the active cell region; a source region disposed on at least one side of the gate electrode in the active cell region; a gate insulating layer disposed between the gate bus and the substrate and between the gate electrode and the substrate; a gate metal disposed on the gate bus to be connected to the gate bus; and a source metal disposed on the gate electrode to be connected to the source region, wherein the gate bus and the gate electrode are disposed on the same layer.

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First Claim