semiconductor structure and fabricating method of the same
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United States of America
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Issued Date -
Mar 13, 2025
app pub date -
Oct 13, 2023
filing date -
Oct 13, 2023
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Abstract
A semiconductor includes a substrate. A gate structure is disposed on the substrate. A liner oxide contacts a side of the gate structure. A silicon oxide spacer contacts the liner oxide. An end of the silicon oxide spacer forms a kink profile. A silicon nitride spacer contacts the silicon oxide spacer and a tail of the silicon nitride spacer covers part of the kink profile. A stressor covers the silicon nitride spacer and the substrate.
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