SELECTIVE DEPOSITION OF MASK FOR REDUCING NANO SHEET LOSS
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United States of America
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Issued Date -
Mar 13, 2025
app pub date -
Nov 21, 2023
filing date -
Nov 21, 2023
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Abstract
A method includes forming a protruding fin, and forming a first dielectric layer including a first dielectric layer and a second dielectric layer over the first dielectric layer. The first dielectric layer includes a first top portion on a top surface of the protruding fin, and a sidewall portion on a sidewall of the protruding fin. The second dielectric layer is over the first top portion and the top surface of the protruding fin, and is formed using an anisotropic deposition process. The method further includes forming a dummy gate electrode on the second dielectric layer, forming a gate spacer on a sidewall of the dummy gate electrode, removing the dummy gate electrode, and forming a replacement gate electrode in a space left by the dummy gate electrode.
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