SEMICONDUCTOR DEVICE MANUFACTURING METHOD AND SEMICONDUCTOR DEVICE
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United States of America
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Mar 13, 2025
app pub date -
Mar 4, 2024
filing date -
Mar 4, 2024
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Abstract
A semiconductor device manufacturing method of embodiments includes: forming a mask material having openings on a surface of a silicon carbide layer; performing first processing for implanting at least one substance selected from a group consisting of hydrogen (H), helium (He), and electrons into a first region of the silicon carbide layer by using the mask material as a mask; performing a first ion implantation for implanting p-type impurities into a second region shallower than the first region by using the mask material as a mask before the first processing or after the first processing; removing the mask material after the first processing and the first ion implantation; and performing a first heat treatment at a temperature equal to or more than 1600° C. after removing the mask material.
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