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Abstract

A nitride light-emitting element includes: a GaN substrate; an n-type semiconductor layer including an n-type nitride-based semiconductor, the n-type semiconductor layer being disposed on the GaN substrate; a p-type semiconductor layer including a p-type nitride-based semiconductor; an active layer including a nitride-based semiconductor containing Ga or In, the active layer being disposed between the n-type semiconductor layer and the p-type semiconductor layer; and a p-type electron barrier layer including Al, the p-type electron barrier layer being disposed between the active layer and the p-type semiconductor layer. The p-type electron barrier layer shows a composition distribution in which a position in a depth direction of the p-type electron barrier layer is taken as a horizontal axis, and a proportion of an Al element in a total amount of group III elements at each position is taken as a vertical axis. The composition distribution has maximum value A₁. The maximum value A₁ is 46 mol % or more. The composition distribution has a width La of a region including the maximum value A₁ in which the proportion of the Al element is continuously 0.9 times or more maximum value A₁. A ratio of the width La to a thickness Lm of the p-type electron barrier layer is 0.2 or less.

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