METHOD FOR FILLING GAP

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United States of America

APP PUB NO 20250087529A1
SERIAL NO

18464993

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Abstract

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A method for filling a gap includes: filling a dielectric layer in the gap so that a seam is formed in the dielectric layer, the dielectric layer including two surface portions at two opposite sides of the seam, respectively; introducing a surface modification agent into the seam such that each of the two surface portions has first functional groups and second functional groups; forming a stress layer on the dielectric layer to cover the seam, the stress layer including a material different from that of the dielectric layer; and applying an energy field to permit the two surface portions to bond with each other through reaction between the first functional groups and the second functional groups.

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Patent Owner(s)

Patent OwnerAddress
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTDNO 8 LI-HSIN ROAD 6 HSINCHU SCIENCE PARK HSINCHU 300

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
CHENG, Po-Hsien Hsinchu, TW 28 21
FANG, Chia-Yu Hsinchu, TW 2 3
HUANG, Tai-Chun Hsinchu, TW 170 1430
KO, Chung-Ting Hsinchu, TW 92 136
LIN, Sung-En Hsinchu, TW 48 24
PENG, Yu-Yun Hsinchu, TW 87 571

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