METHODS FOR FABRICATING SEMICONDCUTOR STRUCTURES
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United States of America
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Issued Date -
Mar 13, 2025
app pub date -
Nov 26, 2024
filing date -
Nov 26, 2024
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Abstract
Embodiments of the present disclosure relates to method of forming trench and via features using dielectric and metal mask layers. Particularly, embodiments of present disclosure provide a hard mask stack including a first dielectric mask layer, and second dielectric mask layer and a metal mask layer, wherein the first dielectric mask layer and second dielectric mask layer have a high etch selectivity.
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