Importance

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Abstract

A processing method is for thinning a wafer formed with a chamfered portion on an outer periphery, and includes: forming an annular groove from the first surface side of the wafer along an outer peripheral edge of the wafer to a predetermined thickness and forming a remaining portion below the annular groove, the annular groove being formed so that a distance between a groove bottom and the second surface side of the wafer decreases from a center side of the wafer toward the outer peripheral edge side and a position of the groove bottom in a thickness direction of the wafer varies in a width direction; and bringing a grinding stone into contact with the second surface and moving the grinding stone in the thickness direction to grind the second surface side while crushing and removing the remaining portion, so as to thin the wafer to the predetermined thickness.

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First Claim