METHOD OF MANUFACTURING A SEMICONDUCTOR DEVICE
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United States of America
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Issued Date -
Mar 13, 2025
app pub date -
Nov 25, 2024
filing date -
Nov 25, 2024
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Abstract
The present invention is related to a method for fabricating a semiconductor device capable of forming fine patterns. The method for fabricating the semiconductor device according to the present invention may comprise forming an etch mask layer on an etch target layer; forming a spacer structure in which first spacers and second spacers are alternately disposed and spaced apart from each other on the etch mask layer; forming first spacer lines through selective etching of the first spacers; forming second spacer lines through selective etching of the second spacers; and etching the etch target layer to form a plurality of fine line patterns using the first and second spacer lines.
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