SEMICONDUCTOR DEVICE AND FORMATION METHOD THEREOF
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United States of America
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Issued Date -
Mar 13, 2025
app pub date -
Nov 22, 2024
filing date -
Nov 22, 2024
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Abstract
A method of forming a semiconductor device includes forming a semiconductor strip extending above a semiconductor substrate, forming shallow trench isolation (STI) regions on opposite sides of the semiconductor strip, recessing a portion of the semiconductor strip, etching the STI regions to form a recess in the STI regions, forming a first thermal conductive layer in the recess, forming a source/drain epitaxy structure on the first thermal conductive layer, and forming a gate stack across the semiconductor strip and extending over the STI regions.
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