APPARATUS, SYSTEMS, AND METHODS OF USING ATOMIC HYDROGEN RADICALS WITH SELECTIVE EPITAXIAL DEPOSITION

Number of patents in Portfolio can not be more than 2000

United States of America

APP PUB NO 20250087485A1
SERIAL NO

18954712

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Abstract

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Aspects of the present disclosure relate to apparatus, systems, and methods of using atomic hydrogen radicals with epitaxial deposition. In one aspect, nodular defects (e.g., nodules) are removed from epitaxial layers of substrate. In one implementation, a method of processing substrates includes selectively growing an epitaxial layer on one or more crystalline surfaces of a substrate. The epitaxial layer includes silicon. The method also includes etching the substrate to remove a plurality of nodules from one or more non-crystalline surfaces of the substrate. The etching includes exposing the substrate to atomic hydrogen radicals. The method also includes thermally annealing the epitaxial layer to an anneal temperature that is 600 degrees Celsius or higher.

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Patent Owner(s)

Patent OwnerAddress
APPLIED MATERIALS INC3050 BOWERS AVENUE SANTA CLARA CA 95054

International Classification(s)

Inventor(s)

Inventor Name Address # of filed Patents Total Citations
BURROWS, Brian Hayes San Jose, US 15 546
CHU, Schubert S San Francisco, US 100 6529
HUANG, Yi-Chiau Fremont, US 74 6035
SANCHEZ, Errol Antonio C Tracy, US 110 6300
WU, Chen-Ying Santa Clara, US 12 4
YE, Zhiyuan San Jose, US 109 3124

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