SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF
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United States of America
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Issued Date -
Mar 13, 2025
app pub date -
Nov 22, 2024
filing date -
Nov 22, 2024
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Abstract
A device includes gate spacers, a gate dielectric layer, and one or more gate metals. The gate spacers are over a substrate. The gate dielectric layer is between the gate spacers. The gate dielectric layer includes a horizontal portion extending parallel to a top surface of the substrate, and vertical portions extending upwards from the horizontal portion. A first one of the vertical portions has a thickness less than a thickness of the horizontal portion.
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