Importance

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Abstract

Disclosed herein are etching methods, patterned substrates made using said methods, and methods of use of said patterned substrates. For example, described herein are methods comprising: oxidizing at least a portion of a surface of a substrate comprising a group III-V compound, thereby forming an oxidized layer at said portion of the surface; and etching the oxidized layer by exposing the oxidized layer to an etchant; wherein: the group III-V compound comprises one or more group III elements (e.g., Al, Ga, In, B, Sc, Y, or a combination thereof) and a group V element (e.g., N, As, or Sb); the etchant comprises at least one of the group III elements; and the etchant removes oxides by the etchant reacting with the oxide to form a suboxide, which desorbs from the surface.

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First Claim