THREE DIMENSIONAL STACKED NONVOLATILE SEMICONDUCTOR MEMORY
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United States of America
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Mar 13, 2025
app pub date -
Nov 20, 2024
filing date -
Nov 20, 2024
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Abstract
A three dimensional stacked nonvolatile semiconductor memory according to an example of the present invention includes a memory cell array comprised of first and second blocks. The first block has a first cell unit which includes a memory cell to be programmed and a second cell unit which does not include a memory cell to be programmed, and programming is executed by applying a program potential or a transfer potential to word lines in the first block after the initial potential of channels of the memory cells in the first and second cell units is set to a plus potential. In the programming, the program potential and the transfer potential are not applied to word lines in the second block.
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