Power-Gate Structure

Number of patents in Portfolio can not be more than 2000

United States of America

APP PUB NO 20250087251A1
SERIAL NO

18367902

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Abstract

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Various implementations described herein are directed to a device having a power-gate structure with multiple transistors including a first transistor and a second transistor. The first transistor may be coupled between a first voltage node and a second voltage node, and the second transistor may be coupled between the second voltage node and a third voltage node that is coupled to the second voltage node.

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Patent Owner(s)

Patent OwnerAddress
ARM LIMITED110 FULBOURN ROAD CAMBRIDGE CB1 9NJ

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Chen, Andy Wangkun Austin, US 86 160
Mathur, Rahul Austin, US 26 28

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