PATTERN FORMING METHOD AND METHOD FOR MANUFACTURING ELECTRONIC DEVICE
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United States of America
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Issued Date -
Mar 13, 2025
app pub date -
Nov 22, 2024
filing date -
Nov 22, 2024
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Abstract
An object of the present invention is to provide a pattern forming method capable of forming a pattern having excellent limit resolution, and a method for manufacturing an electronic device. The pattern forming method of the present invention is a pattern forming method having a step 1 of forming a metal resist film on a substrate using an actinic ray-sensitive or radiation-sensitive resin composition including a metal compound having at least one bond selected from the group consisting of a metal-carbon bond and a metal-oxygen bond, a step 2 of exposing the metal resist film, and a step 3 of obtaining a pattern by subjecting the exposed metal resist film to a development treatment with a developer including an organic solvent to remove a non-exposed portion, in which the pattern forming method may further have, after the step 3, a step 4 of washing the pattern with a rinsing liquid including an organic solvent, and the developer or the rinsing liquid satisfies predetermined requirements.
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