METHOD OF MANUFACTURING SILICON CARBIDE WAFER AND METHOD OF MANUFACTURING SILICON CARBIDE INGOT

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United States of America

APP PUB NO 20250084561A1
SERIAL NO

18704923

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Abstract

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Disclosed is a method of manufacturing a silicon carbide wafer. The method of manufacturing a silicon carbide wafer includes a step of disposing a silicon carbide block in a crucible; a step of sublimating a silicon carbide included in the silicon carbide block to form a silicon carbide ingot; and a step of processing the silicon carbide ingot.

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Patent Owner(s)

Patent OwnerAddress
SENIC INCCHUNGCHEONGNAM-DO

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
CHOI, Jung Woo Gyeonggi-do, KR 66 197
KIM, Jung Gyu Gyeonggi-do, KR 12 55
KU, Kap Ryeol Gyeonggi-do, KR 4 0
KYUN, Myung Ok Gyeonggi-do, KR 12 0
PARK, Jong Hwi Gyeonggi-do, KR 47 37
SEO, Jung Doo Gyeonggi-do, KR 14 2

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