Importance

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Abstract

A semiconductor device includes a semiconductor substrate having at least one element region in which a transistor is disposed, an interlayer insulating film disposed above the semiconductor substrate, and a semiconductor layer disposed above the interlayer insulating film. The semiconductor layer includes a first semiconductor layer of a first conductivity type connected to a gate of the transistor, a second semiconductor layer of a second conductivity type connected to the first semiconductor layer, and a third semiconductor layer of the first conductivity type connected to the second semiconductor layer and connected to a low potential terminal of the transistor.

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First Claim