SEMICONDUCTOR DEVICE STRUCTURE AND METHODS OF FORMING THE SAME
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United States of America
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Issued Date -
Mar 6, 2025
app pub date -
Jan 3, 2024
filing date -
Jan 3, 2024
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Abstract
A semiconductor device structure and methods of forming the same are described. The structure includes a first semiconductor material disposed over a substrate and a dielectric layer disposed on the first semiconductor material. The dielectric layer includes a dopant. The structure further includes a second semiconductor material disposed on the dielectric layer, a first semiconductor layer in contact with the second semiconductor material, and a first dielectric spacer in contact with the first semiconductor layer, wherein the first dielectric spacer includes the dopant.
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